4-GHz Modulation Bandwidth of Integrated 2X2 LED Array
Author:
Choa Hsin Wu, Gabriel Walter , Han Wui Then, Nick Holonyak Jr. and Milton Feng
IEEE Photonics Technology Letters (Volume: 21, Issue: 24, Dec.15, 2009)
Publication Year:
2009
Page(s):
1834 – 1836
Date of Publication:
10 November 2009
Citation:
Wu, C., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). 4-GHz Modulation Bandwidth of Integrated 2X2 LED Array. IEEE Photonics Technology Letters, 21(24), 1834-1836. doi:10.1109/lpt.2009.2034385
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Resonance-Free Frequency Response Of a Semiconductor Laser
Author:
Milton Feng, Han Wui Then, Nick Holonyak, Jr., Adam James and Gabriel Walter
Appl. Phys. Lett. 95, 033509 (2009)
Received:
16 May 2009
Accepted:
29 June 2009
Published online:
21 July 2009
Citation:
Feng, M., Then, H. W., Holonyak, N., Walter, G., & James, A. (2009). Resonance-free frequency response of a semiconductor laser. Applied Physics Letters, 95(3), 033509. doi:10.1063/1.3184580
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4.3 GHz Optical Bandwidth Light Emitting Transistor
Author:
Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 241101 (2009)
Received:
29 January 2009
Accepted:
17 April 2009
Published online:
15 June 2009
Citation:
Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94(24), 241101. doi:10.1063/1.3153146
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Tilted-Charge High Speed (7 GHz) Light Emitting Diode
Author:
Gabriel Walter, Choa Hsin Wu, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 231125 (2009)
Received:
27 April 2009
Accepted:
26 May 2009
Published online:
12 June 2009
Citation:
Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). Tilted-charge high speed (7 GHz) light emitting diode. Applied Physics Letters, 94(23), 231125. doi:10.1063/1.3154565
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Device performance of light emitting transistors with C-doped and Zn-doped base layers
Author:
Y. Huang, J.-H. Ryou, R. D. Dupuis, F. Dixon, N. Holonyak, M. Feng
Indium Phosphide & Related Materials, 2009. IPRM '09.(IEEE)
Date of Conference:
10-14 May 2009
Date Added to IEEE Xplore:
29 May 2009
Citation:
Huang, Y., Ryou, J., Dupuis, R. D., Dixon, F., Holonyak, N., & Feng, M. (2009). Device performance of light emitting transistors with C-doped and Zn-doped base layers. 2009 IEEE International Conference on Indium Phosphide & Related Materials. doi:10.1109/iciprm.2009.5012449
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Scaling of Light Emitting Transistor For Multigigahertz Optical Bandwidth
Author:
Choa Hsin Wu, Gabriel Walter, Han Wui Then, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 171101 (2009)
Received:
2 March 2009
Accepted:
9 April 2009
Published online:
27 April 2009
Citation:
Wu, C. H., Walter, G., Then, H. W., Feng, M., & Holonyak, N. (2009). Scaling of light emitting transistor for multigigahertz optical bandwidth. Applied Physics Letters, 94(17), 171101. doi:10.1063/1.3126642
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High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes.
Author:
Coskun Kocabas, Simon Dunham, Qing Cao, Kurt Cimino, Xinning Ho, Hoon-Sik Kim, Dale Dawson, Joseph Payne, Mark Stuenkel, Hong Zhang, Tony Banks, Milton Feng, Slava V Rotkin, John A Rogers
Nano Lett., 2009, 9 (5), pp 1937–1943
Received:
13 January 2009
Published in print:
13 May 2009
Published online:
8 April 2009
Citation:
Kocabas, C., Dunham, S., Cao, Q., Cimino, K., Ho, X., Kim, H. et al. (2009). High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes. Nano Letters, 9(5), 1937-1943. doi:10.1021/nl9001074
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Electrical-Optical Signal Mixing and Multiplication (2 → 22 GHz) With a Tunnel Junction Transistor Laser
Author:
Han Wui Then, Chao Hsin Wu, Gabriel Walter, Milton Feng and Nick Holonyak, Jr.
Appl. Phys. Lett. 94, 101114 (2009)
Received:
16 January 2009
Accepted:
26 February 2009
Published online:
13 March 2009
Citation:
Then, H. W., Wu, C. H., Walter, G., Feng, M., & Holonyak, N. (2009). Electrical-optical signal mixing and multiplication (2→22 GHz) with a tunnel junction transistor laser. Applied Physics Letters, 94(10), 101114. doi:10.1063/1.3100294
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Tunnel Junction Transistor Laser
Author:
Han Wui Then, Nick Holonyak Jr. and Milton Feng, Choa Hsin Wu, and Gabriel Walter
Appl. Phys. Lett. 94, 041118 (2009)
Received:
20 December 2008
Accepted:
9 January 2009
Published online:
29 January 2009
Citation:
Feng, M., Holonyak, N., Then, H. W., Wu, C. H., & Walter, G. (2009). Tunnel junction transistor laser. Applied Physics Letters, 94(4), 041118. doi:10.1063/1.3077020
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Bandwidth Extension By Trade-Off Of Electrical and Optical Gain In a Transistor Laser: Three - Terminal Control
Author:
Han Wui Then, Nick Holonyak, Jr. and Milton Feng
Appl. Phys. Lett. 94, 013509 (2009)
Received:
19 November 2008
Accepted:
18 December 2008
Published online:
9 January 2009
Citation:
Then, H. W., Feng, M., & Holonyak, N. (2009). Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control. Applied Physics Letters, 94(1), 013509. doi:10.1063/1.3068489
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